Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

OPTICS EXPRESS, Volume: 25, Issue: 5, Pages: 4632-4639, (MAR 6 2017)
Siming Chen, Mengya Liao, Mingchu Tang, Jiang Wu, Mickael Martin, Thierry Baron, Alwyn Seeds, and Huiyun Liu

DOI : 10.1364/OE.25.004632

 

https://www.osapublishing.org/oe/abstract.cfm?uri=oe-25-5-4632

ABSTRACT

We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at ~1.3 µm has been achieved with a threshold current density of 425 A/cm2 and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102 °C has been realized, with a threshold current density of 250 A/cm2 and single facet output power exceeding 130 mW at room temperature.



 

Published on November 15, 2018