Heterogeneous integration for novel generations of integrated systems

E-MRS Symposium : Monolithic and heterogeneous integration of advanced materials & devices on silicon (October 2018)
T. Ernst et al.




The symposium aims to gather scientists working on monolithic and heterogeneous integration to expand silicon technology. It is an evolution of a series of symposia that attracted a large number of attendees over the years. This research field paves the way towards highly functionalized Si-based technologies that can address challenges in our societies.

The microelectronics industry has delivered faster and efficient computing devices at a remarkably consistent pace for several decades now. This achievement is mainly due to the classic silicon MOS transistor, which allowed the device scaling down, while improving speed and energy consumption. These benefits led to the rise of high performance and affordable computers, to mobile & low power devices. More recently, the performance demand is pulled by new markets driven by societal needs like the Internet-of-thing, ultra-fast data communication, cognitive systems, application in life-sciences and new computing paradigms. However, transistors cannot scale down indefinitely. The microelectronics industry is therefore looking beyond the classic silicon transistor to secure the future of a new generation of devices. But the best candidates are likely to be those that can be integrated with conventional silicon chip technology. The integration of new materials, like alternative semiconductors or oxides, with conventional silicon electronics will open up a wide range of applications, from ubiquitous low-power devices to photonic based interconnects and quantum information processors. The symposium aims to highlight novel and innovative approaches that allow monolithic and heterogeneous integration on silicon baseline technology, either for CMOS applications (e.g. steep slope switches) or integrated photonics (e.g. monolithic lasers and silicon–organic hybrid modulators on a Si platform). The scope includes fundamental materials understanding, using novel integration schemes and/or state-of-the art modelling, or targeting new fields of application. The focus will be on the fabrication, characterization, and simulation (semi-empirical or ab-initio) of materials considered as non-standard for Si technology, such as strained SiGe, (Si)GeSn(C) etc.; compound semiconductors (III-V, II-VI); oxides, nitrides; and two- dimensional materials (graphene, BN, MX2). Contributions related to innovative hetero-integration techniques (advanced heteroepitaxy, layer transfer, wafer bonding, microstructure printing, self-assembly etc.) will be encouraged. Finally, a particular attention will be given to devices and applications demanding an interdisciplinary approach such as RF applications, biomedical or environmental sensing concepts realized on a semiconductor platform (THz sensing and SERS with semiconductor plasmonics), and to materials innovations that aim at addressing new computing paradigms such as quantum and neuromorphic computation. The productive interaction across disciplines will help materials scientists to drive the exciting transition towards higher-value, highly functionalized Si-based microelectronics, supporting technology that can address today’s and tomorrow’s societal needs.


Published on November 15, 2018