Photonic Devices with Reduced In, Ga and Sb Content

2018 MRS Fall Symposium
Thierry Baron, Marie-Leonor Touraton,Tiphaine Cerba, Mickael Martin, Jérémy Moeyaert, Sylvain David, Virginie Loup, Franck Bassani, Bassem Salem, Karine Samuel, Blandine Ageron, Thomas Ernst, Didier Dutartre, Christophe Jany


 

https://www.mrs.org/fall-2018-symposium-sessions/symposium-sessions-detail?code=BI01

ABSTRACT

The access to raw materials is an economic and major geopolitical stake for the 21st century. Some key elements considered today in the emerging devices for the Internet of Things (IoT) must be substituted or saved (by orders of decades) in a drastic way in the near future. Since tens Billions electronics objects are then being disseminated all over the world in homes, buildings, cars, roads, etc., it is obviously a major concern to revisit the economic, technological, and societal models to develop a sustainable electronic industry that will care about its impact right from the conception of these objects.
III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. More particularly alloys containing Ga, In and Sb are increasingly used by the semiconductors industry for high frequency operation, WIFI technology, high power devices, lasers for communications, sensors… This sector accounts for about 90% of world consumption of gallium for example. With the huge increase of IoT devices there is a real challenge to be able to minimize the consumption of these elements or substitute them but more abundant one to fulfill the same function.
In this contribution, we will show routes to develop processes either to save or substitute In, Ga and Sb to realize specific functions such as light emission and detection, and sensors with technologies compatible with large-scale integration. An important aspect of the work will be devoted to synthesis on large area namely 300 mm wafers, with the concern for compatibility with CMOS processes. We will show that bulk material (InP, GaAs and GaSb substrates) could be substituted by thin layers elaborated on a standard Si(100) microelectronic substrates. Selective deposition will also be considered to put the materials only at the place where it is needed. The physical properties of In, Ga, Sb containing semiconductors elaborated on a silicon platform will be shown and compared with those elaborated on III-V substrates. Demonstration of LEDs emitting in the visible and infra-red region will be shown. As an ultimate solution, 2D materials elaborated on large scale 300 mm Si substrates will be presented and their physical properties will be exposed.

ACKNOWLEDGMENTS
This work was supported by the French government managed by ANR under the Investissements d’avenir economic stimulus package, with reference IRT Nanoelec ANR-10-IRT-05, ANR-15-IDEX-02 and LabEx Minos ANR-10-LABX-55-01



 

Published on November 20, 2018