Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

APPLIED PHYSICS LETTERS, Volume: 109, Issue: 25, Article Number: 253103, (DEC 19 2016)
Martin M., Caliste D., Cipro R., Alcotte R., Moeyaert J., David S., Bassani F., Cerba T., Bogumilowicz Y., Sanchez E., Ye Z., Bao XY., Pin, JB., Baron T., Pochet P.

DOI : 10.1063/1.4972394

 

https://aip.scitation.org/doi/10.1063/1.4972394

ABSTRACT

The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic devices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(001) which is formed during annealing under proper hydrogen chemical potential. This phenomenon could be explained by the formation of dimer vacancy lines which could be responsible for the preferential and selective etching of one type of step leading to the double step surface creation. To check this hypothesis, different experiments have been carried in an industrial 300?mm metalorganic chemical vapor deposition where the total pressure during the annealing step of Si(001) surface has been varied. Under optimized conditions, an APBs-free GaAs layer was grown on a nominal Si(001) surface paving the way for III–V integration on silicon industrial platform.



 

Published on November 15, 2018